Title:
SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, SOLAR CELL USING THE SAME AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2001127326
Kind Code:
A
Abstract:
To form a group-III-V semiconductor layer in such a manner that a major direction of tilt of a group III-V semiconductor layer formed on a group IV semiconductor base substrate having a surface titled from a plane (100) is <011>.
An oxide film on a group IV semiconductor base substrate is removed while a gas containing an element forming the base substrate is supplied. During hetero epitaxial growth, a group V raw material gas (AsH3) is introduced as slightly delayed from an introduction of a group III raw material gas ((CH3)3Ga) or the gases (AsH3) and ((CH3)3Ga) are simultaneously introduced.
Inventors:
UEDA TAKASHI
YAMAGISHI NAGAYASU
GOTO OSAMU
YAMAGISHI NAGAYASU
GOTO OSAMU
Application Number:
JP2000192583A
Publication Date:
May 11, 2001
Filing Date:
June 27, 2000
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
C30B29/42; C30B25/02; H01L21/20; H01L21/205; H01L21/324; H01L31/036; H01L31/0392; H01L31/04; H01L31/06; H01L31/068; H01L31/0693; H01L31/0735; H01L31/18; (IPC1-7): H01L31/04; C30B29/42; H01L21/205
Domestic Patent References:
| JPH02125612A | 1990-05-14 | |||
| JPH0355826A | 1991-03-11 | |||
| JPH03203225A | 1991-09-04 | |||
| JPH0786159A | 1995-03-31 | |||
| JPH05291153A | 1993-11-05 | |||
| JPS6338267A | 1988-02-18 | |||
| JPH08162659A | 1996-06-21 |
Attorney, Agent or Firm:
Kenji Onishi