Title:
SEMICONDUCTOR SUBSTRATE TEMPERATURE MEASURING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING DEVICE INCLUDING IT, TEMPERATURE MEASURING METHOD FOR SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2008218929
Kind Code:
A
Abstract:
To measure a temperature of a semiconductor substrate with high accuracy and high reproducibility.
An MBE device 20 acting as a semiconductor device manufacturing device including a semiconductor substrate temperature measuring device is provided with a substrate temperature calculating device 11 which calculates a temperature of a substrate 2 based on a spectrum of scattered light scattered by the substrate 2 in the semiconductor substrate temperature measuring device which measures a temperature of a semiconductor substrate. The substrate temperature calculating device 11 compensates the temperature of the substrate 2 calculated based on the spectrum of the scattered light, based on a dopant concentration of the substrate 2.
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Inventors:
SHIMIZU KAZUHISA
UNEYAMA KAZUHIRO
SAKAGAMI HIDEKAZU
UNEYAMA KAZUHIRO
SAKAGAMI HIDEKAZU
Application Number:
JP2007057868A
Publication Date:
September 18, 2008
Filing Date:
March 07, 2007
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/203; G01K11/12; G01K15/00; H01L21/205
Domestic Patent References:
| JP2006189261A | 2006-07-20 | |||
| JP2003519380A | 2003-06-17 |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office