Title:
センサ素子とその製造方法
Document Type and Number:
Japanese Patent JP3612067
Kind Code:
B2
Abstract:
A thermoelectric sensor element that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor means, such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements are manufactured of two dissimilar metals in a sinuous pattern to provide the thermoelectric effect.
Inventors:
Higashi, Robert Y
Johnson, Robert Giy
Johnson, Robert Giy
Application Number:
JP50141494A
Publication Date:
January 19, 2005
Filing Date:
June 11, 1992
Export Citation:
Assignee:
Honeywell International Inc.
International Classes:
C07C405/00; A61K31/557; A61K31/5575; A61P27/02; B01L3/00; C07B61/00; C07C69/74; C07D307/935; G01J5/12; H01L27/16; H01L35/02; H01L35/32; (IPC1-7): H01L35/02
Attorney, Agent or Firm:
Masaki Yamakawa
Hiroro Kurokawa
Masayuki Konno
Osamu Nishiyama
Shigeki Yamakawa
Hiroro Kurokawa
Masayuki Konno
Osamu Nishiyama
Shigeki Yamakawa