Title:
ＳｉＣ単結晶の評価方法、及び品質検査方法
Document Type and Number:
Japanese Patent JP7170460
Kind Code:
B2
Abstract:
This method for evaluating an SiC single crystal comprises: a step wherein the amount of curvature of an atomic arrangement surface is measured in a first direction that passes through the center of the plan view; and a step wherein the basal plane dislocation (BPD) density is roughly estimated from the amount of curvature of the atomic arrangement surface.
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Inventors:
Yohei Fujikawa
Hidetaka Takaba
Hidetaka Takaba
Application Number:
JP2018152393A
Publication Date:
November 14, 2022
Filing Date:
August 13, 2018
Export Citation:
Assignee:
昭和電工株式会社
International Classes:
C30B29/36
Domestic Patent References:
| JP2018104220A |
Foreign References:
| WO2009035095A1 | ||||
| WO2018131449A1 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomomasa Katsumata
Norihiko Ara
Tomomasa Katsumata
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