Title:
SIDE WALL FORMING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH08162436
Kind Code:
A
Abstract:
PURPOSE: To form a side wall without forming an over etched part.
CONSTITUTION: Resist 12 is formed on a substrate 11, and a metal gate film 13 is formed on the substrate 11 and the resist 12. Positive resist 15 is formed from above, and recessed parts 14 formed between the resist 12 and the substrate 11 are filled with the positive resist 15. After a light or ultraviolet rays are radiated from above the flat surface of the positive resist 15, exposed parts in the positive resist 15 are eliminated, and unexposed parts in the recessed parts 14 are left. After that, a metal gate is formed on the side of the resist 12 by anisotropic etching, and the resist 12 is eliminated.
Inventors:
MATSUBARA KYOJI
ONISHI TOYOKAZU
ONISHI TOYOKAZU
Application Number:
JP29738494A
Publication Date:
June 21, 1996
Filing Date:
November 30, 1994
Export Citation:
Assignee:
TOYOTA MOTOR CORP
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
Hironobu Onda