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Title:
SILICA FILM-FORMING COMPOSITION, SILICA FILM, ITS FORMING METHOD AND ELECTRONIC PART HAVING SILICA FILM
Document Type and Number:
Japanese Patent JP2006045352
Kind Code:
A
Abstract:

To provide a silica film-forming composition which is capable of forming a silica film having a low dielectric constant.

The silica film-forming composition contains (a) a siloxane resin obtained through hydrolytic condensation of a compound of formula (1): RnSiX4-n (wherein R is a group containing at least one atom chosen from B, N, Al, P, Si, Ge and Ti, a 1-20C organic group, H atom or F atom; X is a hydrolyzable group; and n is an integer of 0-2, provided that when n=2, multiple R's are identical to or different from each other, and when n is 0-2, multiple X's are identical to or different from each other), (b) a solvent that can dissolve component (a), (c) a solid particle having a void and (d) a quaternary onium salt.


Inventors:
ABE KOICHI
SAKURAI HARUAKI
Application Number:
JP2004228554A
Publication Date:
February 16, 2006
Filing Date:
August 04, 2004
Export Citation:
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Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
C09D183/04; C09D7/12; C09D183/02; H01L21/312; H01L21/316; H05K3/46
Domestic Patent References:
JP2003041191A2003-02-13
JPH05286785A1993-11-02
JP2000269204A2000-09-29
JP2002093796A2002-03-29
JP2003257963A2003-09-12
Foreign References:
WO2003066750A12003-08-14
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Ryugo Akahori