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Title:
SILICON CARBIDE BASED POROUS COMPACT AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2002356384
Kind Code:
A
Abstract:

To provide a silicon carbide based porous compact and a method of manufacturing the same which is containing a silicon carbide grain and a silicon nitride grain, excellent in heat resistance, corrosion resistance, chemical resistance, strength, heat shock resistance, and preferable for collecting and eliminating particulates.

The method of manufacturing the silicon carbide based porous compact is characterized in that a compact formed of 70-98 mass% mixed powder composed of 70-95 mass% silicon carbide grain of 10-100 μm mean grain diameter, 5-30 mass % metallic silicon grain of 1-50 μm mean grain diameter, and 2-30 mass % pore generating agent, is heat treated in a nitrogen atmosphere so as to nitride the metallic silicon grain.


Inventors:
MIYAGAWA NAOMICHI
TAKAHASHI HIDEO
Application Number:
JP2001166780A
Publication Date:
December 13, 2002
Filing Date:
June 01, 2001
Export Citation:
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Assignee:
ASAHI GLASS CO LTD
International Classes:
F01N3/02; B01D39/20; C04B35/565; C04B35/571; C04B38/06; C04B38/08; (IPC1-7): C04B38/08; B01D39/20; C04B35/565; C04B35/571; C04B38/06; F01N3/02
Domestic Patent References:
JPH0465360A1992-03-02
JPH06116059A1994-04-26