SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Title:

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Document Type and Number:

Japanese Patent JP2014120641

Kind Code:

A

Abstract:

To provide a silicon carbide semiconductor device and a manufacturing method of the same, which support reduction in on-resistance and reliability of a gate oxide film at the same time.

A silicon carbide semiconductor device of the present embodiment comprises: a first conductivity type SiC substrate 11; a first conductivity type epitaxial layer 12 formed on the SiC substrate 11; a second conductivity type well region 13 selectively formed in a surface layer of the epitaxial layer 12; a first conductivity type source region 14 selectively formed in a surface layer of the well region 13; a gate oxide film 21 formed over from a surface of the well region 13 sandwiched by the source region 14 and the epitaxial layer 12 to a surface of the epitaxial layer 12; and a gate electrode 22 formed on the gate oxide film 21. An interface between the gate oxide film 21 and the epitaxial layer 12 has a negative fixed charge 31.

Inventors:

EBIIKE YUJI
TARUI YOICHIRO
FURUHASHI AKIYUKI

Application Number:

JP2012275465A

Publication Date:

June 30, 2014

Filing Date:

December 18, 2012

Export Citation:

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Assignee:

MITSUBISHI ELECTRIC CORP

International Classes:

H01L29/78; H01L21/336; H01L29/12; H01L29/41; H01L29/423; H01L29/49

Domestic Patent References:

JP2005191241A

2005-07-14

Foreign References:

WO2012131898A1

2012-10-04

Attorney, Agent or Firm:

Yoshitake Hidetoshi
Takahiro Arita

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