Title:
SILICON CARBIDE THIN FILM WAFER AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3752895
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon carbide thin film wafer having high quality and a method for producing the same, which is free from the consumption of a susceptor.
SOLUTION: It is prevented that silicon carbide is reversibly reacted with hydrogen to be vaporized as the hydride of silicon and carbon are inhibited by growing a silicon carbide thin film on a silicon carbide single crystal substrate 5 in an atmosphere free from hydrogen in a quartz reaction tube 1. Accordingly, a good quality silicon carbide thin film wafer can be obtained and a production method capable of producing the silicon carbide thin film wafer without consuming susceptor is realized. In the case that the silicon carbide thin film is grown on the silicon carbide single crystal substrate 5 in an atmosphere free from oxygen in the quartz reaction tube 1, deterioration of the silicon carbide thin film is inhibited, because no oxidation reaction occurs.
Inventors:
Harukan Sakaguchi
Application Number:
JP17112199A
Publication Date:
March 08, 2006
Filing Date:
June 17, 1999
Export Citation:
Assignee:
Hitachi Cable Ltd.
International Classes:
C30B29/36; C30B25/12; C30B25/14; (IPC1-7): C30B29/36; C30B25/12
Domestic Patent References:
| JP56140021A | ||||
| JP54041300A | ||||
| JP2002510598A |
Attorney, Agent or Firm:
Nobuo Kinutani