SILICON CARBIDE WITH HIGH THERMAL CONDUCTIVITY

Title:

SILICON CARBIDE WITH HIGH THERMAL CONDUCTIVITY

Document Type and Number:

Japanese Patent JP2013100608

Kind Code:

A

Abstract:

To provide a silicon carbide film having high thermal conductivity and reduced stacking faults.

The silicon carbide film is deposited by a low pressure chemical vapor deposition method using argon carrier gas, hydrogen gas and methyltrichlorosilane as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.

Inventors:

BRESE NATHANIEL E
GOELA JITENDRA S
PICKERING MICHAEL A

Application Number:

JP2013016694A

Publication Date:

May 23, 2013

Filing Date:

January 31, 2013

Export Citation:

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