Title:
SILICON SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP3020905
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve productivity and working precision by sufficiently obtaining slurry.
SOLUTION: When slurry which can not enter a polishing surface forms a liquid pool and stagnates on the outside surface of a wafer 1 in polishing, the stagnant slurry is scraped out by rotating rectilinear grooves 1b formed on the single side 1a to be polished together with the wafer 1, and slurry is sufficiently supplied to the inside of the polishing surface 1a.
Inventors:
Tsutomu Sato
Application Number:
JP32918897A
Publication Date:
March 15, 2000
Filing Date:
November 28, 1997
Export Citation:
Assignee:
Naoetsu Electronics Industry Co., Ltd.
International Classes:
B24B37/00; H01L21/304; (IPC1-7): H01L21/304; B24B37/00
Domestic Patent References:
| JP1146658A |
Attorney, Agent or Firm:
Masahaya Hayakawa (2 outside)