Title:
Silicon single crystal growth equipment
Document Type and Number:
Japanese Patent JP5957145
Kind Code:
B2
Abstract:
An apparatus for growing a silicon single crystal according to embodiments includes a chamber including a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part for applying heat to the crucible side, the heater disposed beside the crucible; an upper heat insulation member located over the crucible; and upper heater parts located at a lower end portion of the upper heat insulation member, wherein the upper heater parts have diameters different from each other with respect to a center of the crucible, and include a plurality of ring-shaped heaters which are spaced apart from each other. Due to the individually controllable upper heater parts, a uniform thermal environment can be provided for silicon melt accommodated in a crucible, and localized solidification of the silicon melt can be prevented so that the quality of a silicon single crystal and the ingot pulling speed can be readily controlled.
Inventors:
Chung, Soo-in
Application Number:
JP2015528422A
Publication Date:
July 27, 2016
Filing Date:
June 05, 2014
Export Citation:
Assignee:
Ergie Syltron Inc.
International Classes:
C30B29/06; C30B15/22
Domestic Patent References:
| JP2007204332A | ||||
| JP1153589A | ||||
| JP9235175A | ||||
| JP2005053722A | ||||
| JP5294782A | ||||
| JP61183971U |
Foreign References:
| WO2005095680A1 | ||||
| US5087321 |
Attorney, Agent or Firm:
Kimura Mitsuru
Takanori Mamoru
Taiji Morikawa
Kei Sakurada
Mie Hideki
Takanori Mamoru
Taiji Morikawa
Kei Sakurada
Mie Hideki
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