Title:
SILICON WAFER FINAL POLISHING METHOD, AND SILICON WAFER
Document Type and Number:
Japanese Patent JP2016039179
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon wafer final polishing method by which a silicon wafer which has a good haze level on the whole, and is less in unevenness of haze in an outer peripheral portion and less in minute defects can be obtained.SOLUTION: A silicon wafer final polishing method uses: a polishing agent including colloidal silica, ammonia and hydroxyethyl cellulose; and a polishing cloth. In the polishing agent, the colloidal silica has a primary particle diameter of 20 to less than 30 nm; the hydroxyethyl cellulose has a weight-average molecular weight of 400,000 to 700,000. In the polishing agent, D/Dis 1.5-2.5, where Dis a particle diameter when the cumulative volume percentage of particles present in the polishing agent is 95%; and Dis a particle diameter when the cumulative volume percentage of the colloidal silica is 95% with the colloidal silica dispersed in water, provided that the colloidal silica is equal, in concentration, to the colloidal silica. The polishing cloth is dried after seasoning, of which the contact angle at the time when 100 seconds elapses after the drop of pure water is 60° or larger.SELECTED DRAWING: Figure 1
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Inventors:
SATO MICHITO
Application Number:
JP2014159737A
Publication Date:
March 22, 2016
Filing Date:
August 05, 2014
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
H01L21/304; B24B37/00; C09K3/14
Domestic Patent References:
| JP2014118490A | 2014-06-30 | |||
| JP2008168380A | 2008-07-24 |
Foreign References:
| WO2012102144A1 | 2012-08-02 |
Attorney, Agent or Firm:
Mikio Yoshimiya