Title:
PRE-TREATMENT METHOD FOR SUSCEPTOR FOR SILICON WAFER AND HEAT TREATMENT METHOD FOR SILICON WAFER
Document Type and Number:
Japanese Patent JP2023023911
Kind Code:
A
Abstract:
To determine that a sufficient number of dummy runs have been performed.SOLUTION: A pretreatment method for a susceptor for a silicon wafer, specifically a pretreatment method for a susceptor used for a heat treatment for a silicon wafer, includes a dummy run step in which a monitor wafer is placed on the susceptor and heat treated, a contact scar size analysis step in which a planar size of a contact scar formed on a portion in contact with the susceptor on the monitor wafer is measured, and a pass/fail determination step for determining whether the size of the measured contact scar is less than or equal to a predetermined threshold value.SELECTED DRAWING: Figure 1
Inventors:
SUDO HARUO
ARAKI KOJI
AOKI TATSUHIKO
ARAKI KOJI
AOKI TATSUHIKO
Application Number:
JP2021129860A
Publication Date:
February 16, 2023
Filing Date:
August 06, 2021
Export Citation:
Assignee:
GLOBALWAFERS JAPAN CO LTD
International Classes:
H01L21/66; H01L21/26; H01L21/31; H01L21/683
Attorney, Agent or Firm:
Shigeru Kinoshita
Yuko Sawada
Akio Noguchi
Yuko Sawada
Akio Noguchi