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Title:
SINGLE CRYSTAL DIAMOND AND PRODUCTION METHOD THEREOF
Document Type and Number:
Japanese Patent JP2014148463
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To obtain stably a high-quality single crystal diamond which is useful as a substrate for semiconductor devices and has a large area and reduced strain.SOLUTION: A single-crystal diamond is produced by a gas-phase synthetic method which includes the steps of: etching and removing, by reactive ion etching, a principal surface 1 of a single crystal diamond substrate serving as a seed and forming a fresh single crystal diamond layer by a gas-phase synthetic method; and separating the single crystal diamond substrate serving as a seed from the single crystal diamond layer grown freshly by the gas-phase synthetic method. The single crystal diamond substrate serving as the seed is grown by a high-pressure synthetic method or a gas-phase synthetic method. The phase difference of linear polarized light beams which are radiated from opposite principal planes and are perpendicular to each other is maximally 50 nm per 100 μm of the sample thickness throughout the sample by irradiating, from the principal surface 1, with a linear polarized light beam taken as a synthesized light beam of the linear polarized light beams perpendicular mutually.

Inventors:
MEGURO KIICHI
YAMAMOTO YOSHIYUKI
IMAI TAKAHIRO
Application Number:
JP2014059458A
Publication Date:
August 21, 2014
Filing Date:
March 24, 2014
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/04
Domestic Patent References:
JP2004503460A2004-02-05
JPH111392A1999-01-06
JPH0492894A1992-03-25
JP2002299741A2002-10-11
JPH09124393A1997-05-13
JP2006507204A2006-03-02
JP2005538018A2005-12-15
JP2003277183A2003-10-02
JP2005225746A2005-08-25
Foreign References:
WO2004046427A12004-06-03
EP1555337A22005-07-20
WO2004022821A12004-03-18
Attorney, Agent or Firm:
Masami Sakai
Norio Kagami