Title:
SOLID STATE IMAGE SENSOR AND FABRICATION THEREOF
Document Type and Number:
Japanese Patent JP3148158
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enhance maximum charge transfer capacity by setting the thickness of first and second gate insulation films such that channel potentials of same level are established beneath first and second charge transfer electrodes upon application of a same voltage thereto.
SOLUTION: An n-type well layer 102, a first gate oxide film (first film) 103 and a first charge transfer electrode 104 are formed sequentially on a p-type silicon substrate 101. Subsequently, a second gate oxide film (second film) 105 and an oxide film 106 are formed by thermal oxidation followed by formation of a second charge transfer electrode 107. The second film 105 is formed thicker than the first film 103. At the time of forming the second film 105, concentration drop takes place in the n-type well layer 102 and the channel potential beneath the second charge transfer electrode 107 drops below the channel potential beneath the first charge transfer electrode 104, but they are substantially equalized by making thick the second film 105.
Inventors:
Keisuke Hatano
Application Number:
JP23847597A
Publication Date:
March 19, 2001
Filing Date:
September 03, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/339; H01L27/146; H01L27/148; H01L29/762; (IPC1-7): H01L27/148; H01L21/339; H01L29/762
Domestic Patent References:
| JP3109741A |
Attorney, Agent or Firm:
Nobuyuki Kaneda (2 others)
Previous Patent: 釣用すくいあげ具
Next Patent: METHOD FOR FORMING CURVE OF STAINLESS STEEL BAR AND ROLLING DEVICE FOR FORMING CURVE
Next Patent: METHOD FOR FORMING CURVE OF STAINLESS STEEL BAR AND ROLLING DEVICE FOR FORMING CURVE