Title:
SOI WAFER AND METHOD FOR PRODUCING THE SAME, AND MEMS DEVICE
Document Type and Number:
Japanese Patent JP2013229356
Kind Code:
A
Abstract:
To obtain: an SOI wafer having excellent gettering ability against metal impurities; a method for efficiently producing an SOI wafer; and a highly reliable MEMS device including the SOI wafer.
In an SOI wafer, a support wafer 1 and an active layer wafer 6, each of which is a silicon wafer, are laminated with each other via an oxide film 3. The SOI wafer includes a cavity 1b formed in a lamination surface of at least one of the silicon wafers, and a gettering material 2 formed on an opposite side surface relative to the lamination surface.
Inventors:
YOSHIKAWA EIJI
ICHIKAWA JUNICHI
YOSHIDA YUKIHISA
ICHIKAWA JUNICHI
YOSHIDA YUKIHISA
Application Number:
JP2012098447A
Publication Date:
November 07, 2013
Filing Date:
April 24, 2012
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/02; B81B3/00; G01L9/00; H01L21/322; H01L27/12; H01L29/84
Domestic Patent References:
| JP2000124091A | 2000-04-28 | |||
| JP2008028244A | 2008-02-07 | |||
| JPH0636980A | 1994-02-10 | |||
| JPH09326396A | 1997-12-16 | |||
| JP2001127274A | 2001-05-11 |
Foreign References:
| WO2007072624A1 | 2007-06-28 |
Attorney, Agent or Firm:
Michiharu Soga
Suzuki Kenchi
Kajinami order
Kazuhiro Oyaku
Shunichi Ueda
Junichiro Yoshida
Satoshi Iino
Suzuki Kenchi
Kajinami order
Kazuhiro Oyaku
Shunichi Ueda
Junichiro Yoshida
Satoshi Iino