PURPOSE: To obtain a solid-state image pickup device, which has high density and from which dark currents are hardly generated, by arranging photoelectric conversion element sections in m lines and n rows and forming the element sections by two kinds or more of impurity layers having a conduction type reverse to a substrate in concentration different from the substrate.
CONSTITUTION: An N- layer 12 and an N+ layer 11 are shaped to a P type substrate 13. The concentration of the N- layer 12 is lowered with a depleting by fixed applied voltage, the concentration of the N+ layer 11 is elevated with the prevention of depleting, diffusion length is shortened as much as possible and blue sensitivity to incident beams is improved, and the increase of dark currents due to a reaching up to the surface of a depletion layer in the N- layer 12 is prevented. According to said constitution, sensitivity at each wavelength including blue sensitivity to incident beams is enhanced extremely, and the generation of dark currents can be reduced to the utmost.
KOZONO TOSHIYUKI
SUSA MASAHIRO
| JPS5819080A | 1983-02-03 |