To improve red sensitivity by reliably re-irradiating a photodiode with light.
On the backside of an imaging device with a plurality of light receiving units 2, a concave mirror is formed of a reflecting material 11 in the direction of the light receiving units 2 in such a manner that the reflected light that reflects the concave shape of the reflecting material 11 forms the focal point at the PN junction position of the light receiving units 2. Thereby, the incident light transmitted through the light receiving units 2 once is condensed on the light receiving unit 2 side again. Then, it is returned and photoelectrically converted, so that sensitivity, especially red sensitivity to red light which is easily transmitted, is improved. The thickness of the semiconductor substrate 1 should be the thickness at which the reflected light from the reflecting material 11 does not reach the adjacent light receiving unit 2.
| JPS61276365 | SEMICONDUCTOR DEVICE |
| JPS62183171 | PHOTOSENSER DRIVING INTEGRATED CIRCUIT |
| JP3589421 | WINDOW GLASS FOR SEMICONDUCTOR PACKAGE AND ITS PRODUCTION |
Takaaki Yasumura
Takeshi Oshio
Next Patent: SEMICONDUCTOR INTEGRATED DEVICE