Title:
固体撮像素子
Document Type and Number:
Japanese Patent JP7194918
Kind Code:
B2
Abstract:
To improve light collection efficiency in a photoelectric conversion part, by making a charge storage part, provided in a unit pixel, low profile.SOLUTION: A solid state imaging device includes a photoelectric conversion part 102 provided on a semiconductor substrate 101, an interlayer insulator 203 provided on the semiconductor substrate 101, a waveguide 107 provided in the upper side part of the photoelectric conversion part 102 in the interlayer insulator 203, and introducing received light to the photoelectric conversion part 102, a charge storage part 108 having at least a lower electrode 109, a capacitive film 110 and an upper electrode 111 laminated sequentially on the sidewall, and multiple wiring layers 104-106 provided in the interlayer insulator. The lower electrode 109 is electrically connected with at least one wiring layer, out of the multiple wiring layers, on the sidewall of the waveguide 107, and the capacitive film 110 and the upper electrode 111 are stretching to the upper edge part of the waveguide 107 in the interlayer insulator 203.SELECTED DRAWING: Figure 1
Inventors:
Naoki Torasawa
Tatsuya Kabe
Tatsuya Kabe
Application Number:
JP2018041491A
Publication Date:
December 23, 2022
Filing Date:
March 08, 2018
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L27/146; H04N5/369
Domestic Patent References:
| JP2013207321A | ||||
| JP2017174903A | ||||
| JP2013168546A | ||||
| JP2012227375A | ||||
| JP2004063778A | ||||
| JP2012209421A | ||||
| JP2013254763A | ||||
| JP2008235689A | ||||
| JP2013161945A | ||||
| JP2014112580A | ||||
| JP2008244251A |
Foreign References:
| WO2017169882A1 | ||||
| WO2016098624A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Maeda Patent Office
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