To provide a solid-state imaging device in which incident light can be condensed effectively to a photoelectric converting section even if the photoelectric converting section is arranged by being deviated from a translation symmetry arrangement position, and to provide an imaging apparatus using the solid-state imaging device.
An FD (floating diffusion) portion 4 common to two unit pixels, for example, unit pixels 10 and 20 is provided at a boundary position. A photoelectric converting section 2 is formed on a silicon substrate and connected with the FD portion 4 through a charge transfer gate 3. A high refractive index material layer 33 and a low refractive index material layer 34 are provided above the FD portion 4 and in regions other than it, respectively, and the optical path of incident light is altered to condense light at the photoelectric converting section 2 arranged by being shifted to the FD portion 4 side from the central position. The number of transistors per pixel can be decreased by sharing the transistor among the pixels. The high refractive index material layer 33 may have a lens shape.
ISHIWATARI HIROAKI
| JPH06163866A | 1994-06-10 | |||
| JP2005244947A | 2005-09-08 |
| US20050051860A1 | 2005-03-10 |
Masaaki Yoshii
Takahisa Yamamoto