Title:
SOLID-STATE IMAGING ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3402429
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a solid-state imaging element which is high in condensing efficiency and high in sensitivity even when made in a small size with a high density, and also provide a method for fabricating the element.
SOLUTION: Conditions in a plasma CVD method are selected and the CVD method is used to form a SiO2 film 17 having recesses 23, each of which correspond to each of pixels and whose depth is decreased from polycrystalline Si films 13 and 14 to a light receiving part 16. A groove 24 is formed to extend parallel to a side face of each of the polycrystalline Si films 13 and 14 and cover the SiO2 film 17 on the films 13 and 14. Formed as buried in each groove 24 is a light shielding film 25. The light shielding film 25 forms a waveguide for each pixel, thus increasing the condensing efficiency.
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Inventors:
Takashi Fukudokoro
Ken Matsuda
Ken Matsuda
Application Number:
JP32785596A
Publication Date:
May 06, 2003
Filing Date:
November 22, 1996
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L27/148; H01L27/14; H04N5/335; H04N5/359; H04N5/361; H04N5/365; H04N5/369; H04N5/372; (IPC1-7): H01L27/14
Domestic Patent References:
| JP7153932A | ||||
| JP334370A | ||||
| JP485960A | ||||
| JP5175479A |
Attorney, Agent or Firm:
Masaru Tsuchiya