To provide a sputtering method capable of restraining effectively a waved film thickness distribution or film quality distribution from being generated, when forming a film by sputtering onto a target.
Tunnel-like leakage magnetic fields M1, M2 are formed in upper parts of respective targets by magnet units 41-44 respectively arranged on target lower parts, while directing upwards opposed face sides opposed to a substrate W for the respective targets 31-34, the respective magnet units are synchronized during sputtering, to be reciprocated relatively with respect to the targets at a prescribed stroke along an X-direction, and to reciprocate the substrate relatively with respect to the targets at a prescribed stroke along the X-direction. The respective magnet units and the substrate are moved along a direction opposed each other, to make equal a time from a start point of reciprocation motion up to arrival in a turning position.
ARAI MAKOTO
KURATA TAKAOMI
SATO SHIGEMITSU
| JP2007138275A | 2007-06-07 | |||
| JP2008274366A | 2008-11-13 | |||
| JP2004346388A | 2004-12-09 | |||
| JP2007138275A | 2007-06-07 | |||
| JP2008274366A | 2008-11-13 | |||
| JP2004346388A | 2004-12-09 |
| WO2008050618A1 | 2008-05-02 | |||
| WO2008050618A1 | 2008-05-02 |
JPN7015003028; Ｏ．Ｎａｋａｍｕｒａ: 'Ｈｉｇｈ Ｔｃ ｔｈｉｎ ｆｉｌｍｓ ｗｉｔｈ ｒｏｕｇｈｎｅｓｓ ｓｍａｌｌｅｒ ｔｈａｎ ｏｎｅ ｕｎｉｔ ｃｅｌｌ' Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ ６０, 19911015, １２０