To provide a sputtering target capable of attaining high-quality film formation with high productivity by reducing contamination and abnormal electrical discharge due to nodule.
A rotary cylindrical sputtering target (20) includes a plurality of target pieces (22a, 22b) bonded to the periphery of a backing tube (60) while leaving a gap (52a) each between the adjacent target pieces (22a, 22b) in the axial direction. The gap (52a) has a straight section (95) which extends from the outer periphery of the target pieces (22a, 22b) toward the backing tube (60), and a tapered section (94) which is positioned between the straight section (95) and the backing tube (60) with an inclination (θ) in the longitudinal direction of the straight section (95).
JP2008184640A | 2008-08-14 | |||
JP2003027227A | 2003-01-29 | |||
JPH07228967A | 1995-08-29 |
WO2012036079A1 | 2012-03-22 | |||
WO2010035718A1 | 2010-04-01 |
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