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Title:
SPUTTERING TARGET, AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2014224308
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a sputtering target in which generations of discoloration, a spot, and an abnormal discharge are suppressed in spite of inclusion of a high concentration of Na, and a crack is hardly caused thanks to a high strength of the target, and to provide a manufacturing method of the target.SOLUTION: A sputtering target is a sintered body including Ga: 10-40 atom%, Na: 0.1-15 atom%, and the balance of Cu and inevitable impurities. In the sintered body, Na is included as a Na compound consisting of at least one kind among sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite. The sintered body has a structure where a Na compound phase is dispersed, and the Na compound phase has an average particle size of 10 μm or less.

Inventors:
CHO SHUHIN
UMEMOTO KEITA
SHOJI MASAHIRO
Application Number:
JP2014054655A
Publication Date:
December 04, 2014
Filing Date:
March 18, 2014
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34; B22F3/10; B22F3/14; B22F3/15; C22C9/00
Domestic Patent References:
JP2012082498A2012-04-26
JP2007302909A2007-11-22
JP2011214140A2011-10-27
JP2014034703A2014-02-24
JP2014034703A2014-02-24
JP2014034703A2014-02-24
JP2012082498A2012-04-26
JP2007302909A2007-11-22
JP2011214140A2011-10-27
JP2012246574A2012-12-13
JP2012082498A2012-04-26
JP2007302909A2007-11-22
JP2011214140A2011-10-27
JP2012246574A2012-12-13
Foreign References:
WO2011114657A12011-09-22
Attorney, Agent or Firm:
Shuichi Kageyama
Miyake Masayuki
Yasuyuki Kurachi
Kazuo Tomita



 
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