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Title:
SPUTTERING TARGET MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2006161082
Kind Code:
A
Abstract:

To manufacture a homogeneous sputtering target free from defects such as blow holes attributable to casting.

High frequency melting is performed while blowing inert gas such as Ar gas or hydrogen flame as primary melting, the obtained molten metal is sufficiently stirred by a carbon rod, a ceramics rod (zirconia, alumina, magnesia or the like), and an ingot is obtained by solidifying the molten metal in a crucible or by casting it in a mold, and the thus obtained ingot or an ingot manufactured by the arc melting method is subjected to the high frequency melting, medium frequency melting, levitation melting, or cold crucible type vacuum melting in vacuum or Ar gas as the secondary melting. In performing the casting, a mold having an pouring basin part having a height of ≥ 50 mm and an area of ≥ 300 mm2 above the ingot is used.


Inventors:
ISHII NOBUO
HASEGAWA KOICHI
KAWASE MIKA
Application Number:
JP2004352030A
Publication Date:
June 22, 2006
Filing Date:
December 03, 2004
Export Citation:
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Assignee:
ISHIFUKU METAL IND
International Classes:
C23C14/34; B22C9/08; B22D7/10; B22D27/04; B22D27/06; C22C5/04; C22C38/00
Domestic Patent References:
JP2003313659A2003-11-06
JP2004253618A2004-09-09
JP2003311376A2003-11-05
JP2002069625A2002-03-08
JP2001101645A2001-04-13
JP2001214868A2001-08-10
JPH08134567A1996-05-28
JPH08321415A1996-12-03
Attorney, Agent or Firm:
Yukiharu Tomita