Title:
SPUTTERING TARGET AND MANUFACTURING METHOD OF SPUTTERING TARGET
Document Type and Number:
Japanese Patent JP2021091944
Kind Code:
A
Abstract:
To provide a sputtering target capable of suppressing generation of an abnormal discharge attributed to an alkali metal compound and stably depositing a Cu film including an alkali metal, and a manufacturing method of the sputtering target.SOLUTION: A sputtering target comprises copper and an alkali metal compound, has a dispersion phase in which the alkali metal compound is dispersed in a host phase of a copper phase, and has a relative density of 90% or more and the dispersion phase having a maximum particle size of 25 μm or less. A manufacturing method includes: a preparation step of a sintering raw material powder in which an alkali metal compound powder and a copper powder are pulverized and mixed to obtain a sintering raw material powder; and a sintering step in which the sintering raw material powder is sintered to obtain a sintered body. A powder index D calculated from a particle size distribution of the copper powder in the sintering raw material powder is 1.6 or more.SELECTED DRAWING: None
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Inventors:
HASHIMOTO SHU
Application Number:
JP2019224506A
Publication Date:
June 17, 2021
Filing Date:
December 12, 2019
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
C23C14/34
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami