SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS FOR MANUFACTURING THESE

Title:

SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS FOR MANUFACTURING THESE

Document Type and Number:

Japanese Patent JP2012211065

Kind Code:

A

Abstract:

To provide a sputtering target capable of suppressing abnormal discharge generated in film formation of an oxide semiconductor film by using a sputtering method, and can provide stably and well reproducibly the oxide semiconductor film.

A method for manufacturing a sintered compact includes: a step of mixing raw material compounds so that the proportions of In, Ga and Al become atom ratios of the following expressions (1): Ga/(In+Ga+Al)=0.01 to 0.08 and (2): Al/(In+Ga+Al)=0.0001 to 0.03, and making a green body thereof; and a step of sintering the green body by heating at a temperature-rising rate of 0.1°C/min to 2°C/min in the temperature range from 800°C to a sintering temperature, and thereafter holding 1,450°C to 1,650°C for 10 to 50 hours.

Inventors:

EBATA KAZUAKI
TOMAI SHIGEKAZU
MATSUZAKI SHIGEO
YANO KIMINORI

Application Number:

JP2011170896A

Publication Date:

November 01, 2012

Filing Date:

August 04, 2011

Export Citation:

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Assignee:

IDEMITSU KOSAN CO

International Classes:

C04B35/00; C04B35/64; C23C14/08; C23C14/34; C23C14/58; H01L21/336; H01L21/363; H01L21/365; H01L29/786

Foreign References:

WO2010032422A1	2010-03-25
WO2009008297A1	2009-01-15
WO2010018707A1	2010-02-18

Attorney, Agent or Firm:

Kihei Watanabe
Yuko Tanaka
Takeshi Sato

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