SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING OXIDE SEMICONDUCTOR THIN FILM

Title:

SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TRANSISTOR INCLUDING OXIDE SEMICONDUCTOR THIN FILM

Document Type and Number:

Japanese Patent JP2014214359

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a high-density sputtering target.SOLUTION: A sputtering target comprises an oxide containing an indium element (In), a gallium element (Ga), a zinc element (Zn) and an aluminum element (Al), and includes one or more homologous structure compounds represented by InGaO(ZnO)or InAlO(ZnO)(m is 0.1-10), and one or more spinel structure compounds represented by ZnAlOor ZnGaO.

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Inventors:

TAJIMA NOZOMI
EBATA KAZUAKI

Application Number:

JP2013093897A

Publication Date:

November 17, 2014

Filing Date:

April 26, 2013

Export Citation:

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Assignee:

IDEMITSU KOSAN CO

International Classes:

C23C14/34; C04B35/00; C04B35/453; C23C14/08; H01L21/336; H01L21/363; H01L29/786

Attorney, Agent or Firm:

Kihei Watanabe
Yuko Tanaka
Takeshi Sato

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