SPUTTERING TARGET AND PRODUCTION METHOD THEREOF - JX NIPPON MINING & METALS CORP

Title:

SPUTTERING TARGET AND PRODUCTION METHOD THEREOF

Document Type and Number:

Japanese Patent JP2015183244

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a sintered-body sputtering target having little fluctuation of a composition of each deposition, capable of reducing generation of abnormal discharge during sputtering, and suppressing generation of particles.SOLUTION: In a sintered-body sputtering target obtained by laminating and sintering mixed powder having two or more kinds of different composition ratios, and having two or more kinds of different composition areas, the thickness of each layer is 0.3-10 mm, dispersion of each thickness is 2.0 mm or less, and further a variation of the composition ratio between each layer is 0.5- 10 at%.

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Inventors:

ASANO TAKAYUKI

Application Number:

JP2014061499A

Publication Date:

October 22, 2015

Filing Date:

March 25, 2014

Export Citation:

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Assignee:

JX NIPPON MINING & METALS CORP

International Classes:

C23C14/34; B22F7/02; B22F7/06; C22C5/04; C22C5/06; C22C16/00; C22C19/03; C22C19/07; C22C21/00; C22C23/00; C22C27/02; C22C27/04; H01L21/285

Domestic Patent References:

JP2000178724A	2000-06-27
JP2011132588A	2011-07-07
JP2012188691A	2012-10-04

Attorney, Agent or Firm:

Isamu Ogoshi
Ikki Kogoshi

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