To provide a stacked photovoltaic power apparatus in which the deterioration of output characteristics after photodegradation is suppressed, and to provide a method of manufacturing it.

In the stacked photovoltaic power apparatus, a rear face metallic electrode 3, a bottom cell 200 in which microcrystal silicon is used for a photoelectric conversion layer, a front cell 300 which uses an amorphous silicon for a photoelectric device layer, and a surface transparent electrode 10 are formed in this order on a supporting board 100. Either at least an impurity concentration in a front photoelectric conversion layer 8 or an impurity concentration in a bottom photoelectric conversion layer 5 is controlled so that the impurity concentration is higher in the bottom photoelectric conversion layer 5 than that in the front photoelectric conversion layer 8. An impurity does not include a p-type dopant or an n-type dopant, but includes one or two or all of carbon, nitrogen and oxygen.