PURPOSE: To prevent the occurrence of defects and peeling and chipping of films and to form the film stably in few steps in a stamper die comprising a substrate and protruding parts on the substrate by forming the protruding parts of the substrate and a selectively deposited film.

CONSTITUTION: An insulating film 2, e.g. silicon oxide, silicon nitride, polyimide or the like, is formed on a conductive substrate 1 comprising, e.g. silicon, ITO or the like. A resistor pattern 3 is formed thereon by photolithography. Thereafter, with the pattern as a mask, the insulating layer is etched, and an intend pattern is formed. At this time, the etching is performed in an excessive mode. Then, Al is deposited only at a conductive layer 4 by a selective CVD method. Thereafter, the insulating layer is removed, and a stamper die is formed. Thus, occurrence of defects, combersome steps, unstable formation of a plated film, peeling and chipping of films and the like can be eliminated, and the highly accurate transfer of the pattern can be performed.