Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2017118141
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To easily make information stored in a memory element (DRAM) multivalued.SOLUTION: A storage device controls the amount of charge accumulated in a capacitor element included in a memory element (DRAM) by changing potential of a wiring (a bit line), which is used for writing information to the memory element (DRAM), in a period in which a transistor included in the memory element (DRAM) is on. Therefore, the storage device can make information stored in a memory element (DRAM) multivalued without a complex configuration of a semiconductor device including the memory element (DRAM).SELECTED DRAWING: Figure 1
Inventors:
KAMATA KOICHIRO
Application Number:
JP2017041253A
Publication Date:
June 29, 2017
Filing Date:
March 06, 2017
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/8242; G11C11/56; H01L21/28; H01L27/108; H01L29/417; H01L29/423; H01L29/49; H01L29/786
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