Title:
STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2018160547
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a storage device in which an operation voltage is adjusted.SOLUTION: A storage device according to one embodiment comprises: a first conductive layer; a second conductive layer; a first metal oxide layer being located between the first and second conductive layers, and containing at least one first metal element selected from a group consisting of aluminum (Al), gallium (Ga), zirconium (Zr) and hafnium (Hf); and a second metal oxide layer being located between the first metal oxide layer and the second conductive layer, and containing at least one second metal element selected from a group consisting of zinc (Zn), titanium (Ti), tin (Sn), vanadium (V), niobium (Nb), tantalum (Ta) and tungsten (W). The first metal oxide layer contains a third metal element. The third metal element is lower, in a valence value, than a metal element of the at least one first metal element, having the largest atomic proportion in the first metal oxide layer.SELECTED DRAWING: Figure 2
Inventors:
TACHIKAWA TAKU
SAITO MASUMI
SAITO MASUMI
Application Number:
JP2017056696A
Publication Date:
October 11, 2018
Filing Date:
March 22, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama
Akira Sudo
Mitsuyuki Matsuyama