Title:
半導体デバイス用処理液の保管方法、処理液収容体
Document Type and Number:
Japanese Patent JP6518788
Kind Code:
B2
Abstract:
The objective of the present invention is to provide: a method for storing a treatment liquid for semiconductor devices containing at least one substance selected from among hydroxylamine and hydroxylamine salts, which is not susceptible to deterioration of the residue removal performance of the treatment liquid even if temperature environment change between cold storage and standing at room temperature is repeated; and a treatment-liquid containing body. A method for storing a treatment liquid for semiconductor devices according to the present invention stores a treatment liquid for semiconductor devices, which contains at least water and at least one substance selected from among hydroxylamine and hydroxylamine salts, in a storage container. According to this method for storing a treatment liquid for semiconductor devices, the void ratio within the storage container is set to 0.01-30% by volume. In this connection the void ratio is obtained by the following formula (1). Formula (1): Void ratio = {1 - (volume of treatment liquid for semiconductor devices within storage container)/(container volume of storage container)} × 100
Inventors:
Yutsugu Muro
Tomomi Takahashi
Tomotake Takahashi
Tetsuya Shimizu
Akiko Yoshii
Tomomi Takahashi
Tomotake Takahashi
Tetsuya Shimizu
Akiko Yoshii
Application Number:
JP2017555097A
Publication Date:
May 22, 2019
Filing Date:
December 07, 2016
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L21/304; H01L21/027; H01L21/306; H01L21/3065
Domestic Patent References:
| JP2012195590A | ||||
| JP2009217267A | ||||
| JP2006501327A | ||||
| JP2001261312A | ||||
| JP2005236050A |
Foreign References:
| WO2012090669A1 |
Attorney, Agent or Firm:
Nozomi Watanabe
Hideaki Ito
Fumio Mitsuhashi
Hideaki Ito
Fumio Mitsuhashi