PURPOSE: To realize easy manufacture and to improve reliability by constituting a stress conversion element of an impurity diffusion region which is selectively formed through laser irradiation in the presence of impurities exsisting one a semiconductor base surface whose strain gage pattern forms a stress generating part.
CONSTITUTION: After a diaphragm 100 is cleaned, an alumite layer 101 is formed. An amorphous silicon thin film 102 is deposited which is doped with boron by sputtering method using silicon as a target containing B on a surface of the layer 101. This is contained in a laser irradiation chamber, a laser light 103 is irradiated, a strain gage 104 of low resistance which consists of amorphous silicon doped with boron is formed on a part of the thin film 102, and lastly, a wiring pattern 105 is formed. Impurities are contained simultaneously with semiconductor deposit in this way, thereby, the number of processes is reduced and a stress conversion element of high reliability can be acquired readily.
| WO/2009/028283 | SEMICONDUCTOR STRAIN SENSOR |
| WO/2023/173176 | "SYSTEMS, METHODS, AND DEVICES FOR DETECTING PRESSURE ON A SURFACE" |
| JPH05248811 | MECHANICAL SENSOR AND MANUFACTURE THEREOF |
INAGAKI HIROSHI
SUZUKI NATSUYUKI
