Title:
STRUCTURE AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04354371
Kind Code:
A
Abstract:
PURPOSE: To eliminate influence on polishing caused by a step in a device in a device transcription method, to relax stress strain applied during polishing and to restrain generation of defective and disconnection.
CONSTITUTION: In a device transcription method, a process to coat a device with an oxide film 32 for flattening is adopted before contact bonding of a supporting substrate. It is possible to restrain generation of defective and disconnection by protection of a device surface through coating by an oxide film and to eliminate lowering of bonding strength due to a clearance between wafers and generation of over polishing caused by remaining stress by effect of flattening.
Inventors:
TAKAHASHI SOJI
Application Number:
JP15528491A
Publication Date:
December 08, 1992
Filing Date:
May 31, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L27/12; H01L21/02; H01L21/336; H01L29/786; (IPC1-7): H01L27/12
Attorney, Agent or Firm:
Sugano Naka