Title:
基板のプラズマ処理
Document Type and Number:
Japanese Patent JP2013538288
Kind Code:
A
Abstract:
A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomized or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The flow of process gas and the gap between the plasma outlet and the substrate are controlled so that the process gas has a turbulent flow regime within the dielectric housing.
Inventors:
Francoise Machine
Thomas Gaudi
Adrian Tontant
Pierre decane
Patrick Ream Paul
Vincent Kaiser
Thomas Gaudi
Adrian Tontant
Pierre decane
Patrick Ream Paul
Vincent Kaiser
Application Number:
JP2013520006A
Publication Date:
October 10, 2013
Filing Date:
July 20, 2011
Export Citation:
Assignee:
DOW CORNING FRANCE
International Classes:
C23C16/513; C01B31/36; C23C16/505; H05H1/24
Domestic Patent References:
| JP2010539694A | 2010-12-16 | |||
| JP2005522824A | 2005-07-28 | |||
| JP2008537834A | 2008-09-25 | |||
| JPH04242924A | 1992-08-31 | |||
| JP2008519411A | 2008-06-05 | |||
| JP2002093768A | 2002-03-29 |
Foreign References:
| WO2004079812A1 | 2004-09-16 |
Attorney, Agent or Firm:
Kenji Sugimura
Kengo Yoshida
Hiroshi Ikeda
Kengo Yoshida
Hiroshi Ikeda