To provide a substrate processing method and device thereof for supplying a processing agent to a substrate and cleaning it uniformly.
When a cleaning nozzle is shifted, at first/second intermediate points Pa, Pb specified between a center and first/second edges, a shift velocity v of the cleaning nozzle is 18.75 [mm/s] at Pa and 10 [mm/s] at Pb. The shift velocity v is straightly changed at a first velocity change rate on the basis of the shift velocity v at the first intermediate point Pa so that as the cleaning nozzle is separating from the center, and the shift velocity v reduces gradually between the center and Pa. The shift velocity v is straightly changed at a second velocity change rate on the basis of the shift velocity v at the second intermediate point Pb so that as the cleaning nozzle is separating from the center, and the shift velocity v reduces gradually between the second intermediate point Pb and the first/second edges. The first velocity change rate is set to be greater than the second velocity change rate.
| JPS6475072 | ROTARY TREATMENT EQUIPMENT |
| JPH01108724 | RESIST COATER FOR SEMICONDUCTOR WAFER |
OKUMURA TAKESHI
SATO MASANOBU
MORINISHI TAKEYA
