基板加工方法および基板加工装置

Japanese Patent JP6851041

B2

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing device which allow a crystal substrate to be processed to be processed into a substrate containing a processing layer for obtaining a hollowed crystal substrate without crack.SOLUTION: The substrate processing method performs a first step for arranging laser light condensing means 12 on a surface 20u to be irradiated of a crystal substrate 20a to be processed, in a non-contact manner; and performs a second step for changing a light-condensing position Bf of laser light B in a circumferential direction and in a thickness direction of a part 20b to be hollowed of the crystal substrate 20a to be processed while condensing the laser light B and forming a processing layer 20b with deteriorated rupture strength to make a substrate 20C containing a processing layer. In the second step, output of laser light entering the laser light condensing means 12 is controlled so that a processing trace 22c generated in the light condensing position Bf of the laser light B extends along a crystal orientation of the crystal substrate 20a to be processed and does not extend along a different crystal orientation of the crystal substrate 20a to be processed, inside the crystal substrate 20a to be processed and in the vicinity of at least one surface of the crystal substrate to be processed.SELECTED DRAWING: Figure 2

Junichi Ikeno
Yohei Yamada
Hideki Suzuki
Rika Matsuo

JP2016215253A

March 31, 2021

November 02, 2016

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Saitama University
Shin-Etsu Polymer Co., Ltd.

B23K26/53; B23K26/00; B23K26/046; B28D5/00; B28D5/04; H01L21/304

JP2007165848A
JP2013158778A
JP2011206838A
JP2015123465A
JP2010024064A
JP2003010988A

WO2012108054A1

Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu

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