SUBSTRATE TREATING METHOD

Japanese Patent JP3869499

B2

PROBLEM TO BE SOLVED: To reproduce the temperature of a substrate with high accuracy by heat-treating a dummy substrate in a heat treatment chamber and, after putting the wall surface forming material of the heat treatment chamber in the same heat cycle as that used for the heat treatment of the wafer at the heat treatment of the substrate.
SOLUTION: Before a first wafer is heat-treated in a lamp anneal chamber 18, a dummy wafer taken out from a shelf chamber 24 is inserted into the chamber 18. Then the dummy wafer is heat-treated until the wall. surface forming material of the chamber 18 is put in the same heat cycle as that used for the heat treatment of the wafer by heating the dummy wafer by photoirradiation. When the wall surface forming material of the chamber 18 reproduces a normal heat cycle, the first wafer is inserted into the chamber 18 for heat treatment successively to the removal of the dummy wafer from the chamber 18. Thereafter, a plurality of wafers is heat-treated one by one according to the same recipe.

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JPH04330717	MANUFACTURE OF SEMICONDUCTOR FILM
JP4780932	Corrosion resistant members and their manufacturing methods and members for semiconductor / liquid crystal manufacturing equipment

Nishihara Hideo
Takatoshi Chiba
Masuhiro Masuda
Toshihiro Nakajima

JP21298496A

January 17, 2007

July 22, 1996

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Dainippon Screen Mfg. Co., Ltd.

H01L21/205; H01L21/677; H01L21/26; H01L21/68; (IPC1-7): H01L21/26; H01L21/205; H01L21/68

JP1236616A
JP8037158A
JP6267806A
JP7122621A
JP7201951A
JP7240400A

Takeo Mamiya

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