Title:
SUPERCONDUCTING TRANSISTOR
Document Type and Number:
Japanese Patent JPS6464380
Kind Code:
A
Abstract:
PURPOSE:To realize mass production by a method wherein a first ceramic superconductor layer is installed on a substrate, a second ceramic superconductor layer is installed via a non-superconductor layer and a gate electrode is installed at least at one end face of the first and the second ceramic superconductor layers via a gate insulating film. CONSTITUTION:First, a ceramic superconductor layer 2 is formed on a substrate 1; a non-superconductor layer 6 is formed on it. Then, a second ceramic superconductor layer 3 is formed on this non-superconductor layer 6; if an identical material is used, it is possible to continuously form the first and the second ceramic superconductor layers 2, 3 and the non-superconductor layer 6 by only changing an oxidizing condition. Then, the first and the second ceramic superconductor layers 2, 3 and the non-superconductor layer 6 are formed; these are formed by using the same material but by changing their oxygen content; the three layers can be etched by using an identical etching solution. Then, a gate insulating film 4 is formed; then, a gate electrode 5 is formed by using a metal or the like such as aluminum in such a way that it covers an end face E of the ceramic superconductor layers 2, 3.
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Inventors:
KATAOKA EIJI
Application Number:
JP22149387A
Publication Date:
March 10, 1989
Filing Date:
September 04, 1987
Export Citation:
Assignee:
TDK CORP
International Classes:
H01L39/22; H01L29/66; H01L29/78; (IPC1-7): H01L29/66; H01L29/78; H01L39/22