Title:
SWITCH CIRCUIT FOR MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH08186485
Kind Code:
A
Abstract:
PURPOSE: To obtain a depletion-type MOSFET switch circuit operated with a positive voltage as to an ultrahigh frequency monolithic integrated circuit to which only a positive power supply voltage is applied. CONSTITUTION: The circuit is provided with a depletion-type 1st MOSFET 201 whose gate receives an input signal and whose drain provides an output of an output signal, a 2nd MOSFET 203 whose source connects to the source of the 1st MOSFET 201 and whose gate connects to an interruption adjustment power supply Vc, and a 3rd MOSFET 205 whose drain connects to the sources of the 1st and 2nd MOSFETs 201, 203, whose source and gate connect respectively to ground and acting like a constant current source.
Inventors:
KIN BINKEN
KIN CHIYUUKAN
KOU INGABU
RI MASASUZU
BOKU KIYOUMO
KIN CHIYUUKAN
KOU INGABU
RI MASASUZU
BOKU KIYOUMO
Application Number:
JP31539094A
Publication Date:
July 16, 1996
Filing Date:
December 19, 1994
Export Citation:
Assignee:
KOREA ELECTRONICS TELECOMM
International Classes:
H01P1/15; H03K17/687; (IPC1-7): H03K17/687; H01P1/15
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)