Title:
SYSTEM AND METHOD FOR MEASURING THREE-DIMENSIONAL SHAPE OF FINE PATTERN
Document Type and Number:
Japanese Patent JP3817464
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a system and a method that can measure the three- dimensional shape of a fine pattern in a semiconductor device without cutting wafer.
SOLUTION: A test pattern area provided in a scribe line area on the wafer is irradiated with a light beam to measure height and irradiated with an electron beam to measure width and contrast, the correlation therebetween is stored, the pattern of the semiconductor device of the wafer is irradiated with the electron beam to measure width and contrast, and the height of the pattern is estimated to find the three-dimensional shape, based on the obtained contrast, using the correlation.
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Inventors:
Yuya Toyoshima
Yasuhiro Mitsui
Yasutsugu Usami
Kawada Isao
Tadashi Otaka
Yasuhiro Mitsui
Yasutsugu Usami
Kawada Isao
Tadashi Otaka
Application Number:
JP2001346845A
Publication Date:
September 06, 2006
Filing Date:
November 13, 2001
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
G01B11/24; G01B15/04; G01B11/30; H01J37/28; H01L21/00; (IPC1-7): G01B15/04; G01B11/24
Domestic Patent References:
| JP3752483B2 | ||||
| JP10294345A | ||||
| JP4342942A | ||||
| JP3229110A | ||||
| JP63009807A | ||||
| JP62261911A | ||||
| JP62002116A |
Attorney, Agent or Firm:
Manabu Inoue
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