Title:
空隙を形成するためのシステム及び方法
Document Type and Number:
Japanese Patent JP7072075
Kind Code:
B2
Abstract:
Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material and a second layer of an oxygen-containing material. The methods may also include removing the oxygen-containing material.
Inventors:
Chen, Chi Chun
Shui, Lin
Wan, Anchoan
Shui, Lin
Wan, Anchoan
Application Number:
JP2020544602A
Publication Date:
May 19, 2022
Filing Date:
February 27, 2019
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/3065
Domestic Patent References:
| JP2014507073A | ||||
| JP2009111049A |
Foreign References:
| US20160056235 | ||||
| US20090298256 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation
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