To provide a temperature information output device and method for semiconductor memory element, in which temperature correction process is performed in the inside of a semiconductor memory element chip.

This device comprises a temperature-sensing outputting a first voltage, while making the potential level thereof fluctuate, in response to changes in the temperature; a comparison part for increasing or decreasing, in response to a value of comparison of the first voltage with a potential level of a second voltage, a set digital code value and outputting the result as an adjustment code; and a potential level adjustment part determining, in response to a temperature control code and the adjustment code, a potential level where the second voltage can fluctuate to a maximum and a potential level where the second voltage can be fluctuated to a minimum, and adjusting and outputting the potential level of the second voltage corresponding to it.