TEMPERATURE REGULATOR FOR MATERIAL TO BE PR0CESSED

Title:

TEMPERATURE REGULATOR FOR MATERIAL TO BE PR0CESSED

Document Type and Number:

Japanese Patent JPH05166757

Kind Code:

A

Abstract:

PURPOSE: To improve heat exchanging ratio of heat exchanging gas to be introduced between a wafer and a placing base and to minimize adverse influence to a process if the gas is leaked into a processing chamber.

CONSTITUTION: Heat exchanging gas of a predetermined pressure is filled between a wafer 10 and an electrostatic attraction sheet 40 of its rear side through a tube 36 in an etching apparatus. If the gas is CHF3, CF4 containing only carbon C and fluorine F of partial components of the composition of the gas is used as the heat exchanging gas. The CF4 improves its heat exchanging ratio as compared with He of conventional heat exchanging gas and contains the same components as those of the etching gas. Accordingly, even if it is leaked into a processing chamber, adverse influence to a process can be reduced to a minimum limit.

Inventors:

HIRANO YOSHIHISA
TAWARA YOSHIFUMI
HASEGAWA ISAHIRO
HORIOKA KEIJI

Application Number:

JP35207391A

Publication Date:

July 02, 1993

Filing Date:

December 13, 1991

Export Citation:

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Assignee:

TOKYO ELECTRON LTD
TOSHIBA CORP

International Classes:

H01L21/00; H01L21/302; H01L21/3065; B23Q3/15; H01L21/683; (IPC1-7): B23Q3/15; H01L21/302; H01L21/68

Attorney, Agent or Firm:

Hajime Inoue (2 outside)

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Next Patent: MICROWAVE PLASMA ETCHING APPARATUS