To enable measuring the surface temperature of a wafer in a semiconductor manufacturing equipment, improve precision, and reduce cost.
This temperature sensor contains a semiconductor wafer 26 having a thermocouple contact 46 formed or arranged on the wafer surface 30. The thermocouple contact 46 can contain a first patterned conductor 36 and a second patterned conductor 40 formed separately from the conductor 36. The first and the second patterned conductors 36 and 40 are in electric contact with each other and form the thermocouple contact 46 in an overlap region. Other thermocouple contacts are formed above the thermocouple contact 46, and a plurality of thermoelectric couples laminated in the vertical direction are formed. Thereby the temperature gradient in the vertical direction can be measured.
WILLIAM C SHEW
DAVID P CALVERTSON
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