Title:
TEMPERATURE SENSOR
Document Type and Number:
Japanese Patent JP2015179096
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a temperature sensor having a large area and high spatial resolution and capable of measuring temperature with high accuracy.SOLUTION: A temperature sensor has a plurality of measuring cells on a substrate. Each of the measuring cells is provided with a measuring thin film transistor, a first thin film transistor and a second thin film transistor. The first thin film transistor and the second thin film transistor form a differential transistor pair, and a gate of the first thin film transistor is connected to either the source or the drain of the measuring thin film transistor. Since a thin film transistor can be formed on a large substrate in units of micrometers, a temperature sensor having a large area and extremely high spatial resolution of a few micrometers can be realized.
Inventors:
INOUE SATOSHI
MIYASAKA MITSUTOSHI
KIMURA MUTSUMI
MIYASAKA MITSUTOSHI
KIMURA MUTSUMI
Application Number:
JP2015130812A
Publication Date:
October 08, 2015
Filing Date:
June 30, 2015
Export Citation:
Assignee:
SEIKO EPSON CORP
UNIV RYUKOKU
UNIV RYUKOKU
International Classes:
G01K7/01; G01K3/14
Domestic Patent References:
| JP2001249147A | 2001-09-14 | |||
| JP2009520258A | 2009-05-21 | |||
| JP2000009547A | 2000-01-14 |
Foreign References:
| WO2009084352A1 | 2009-07-09 |
Attorney, Agent or Firm:
Kazuaki Watanabe
Keisuke Nishida
Satoshi Nakai
Keisuke Nishida
Satoshi Nakai
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