Title:
TERMINAL STRUCTURE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2014044986
Kind Code:
A
Abstract:
To provide a terminal structure capable of sufficiently responding to a narrow pitch of a bump.
A terminal structure comprises: a base material 10; an electrode 20 formed on the base material 10; an insulating coating layer 30 formed on the base material and the electrode and having an opening exposing a part of the electrode; an under bump metal layer 70 filling the opening and covering a part of the insulating coating layer; and a domal bump 85 covering the under bump metal layer. A height Hbm having a bump maximum diameter of Lbm in a cross section along a lamination direction, is lower than an under bump metal layer maximum height Hu.
Inventors:
YOSHIDA KENICHI
ORIGASA MAKOTO
SEIKE HIDEYUKI
HORIKAWA YUHEI
ABE TOSHIYUKI
ORIGASA MAKOTO
SEIKE HIDEYUKI
HORIKAWA YUHEI
ABE TOSHIYUKI
Application Number:
JP2012185042A
Publication Date:
March 13, 2014
Filing Date:
August 24, 2012
Export Citation:
Assignee:
TDK CORP
International Classes:
H01L21/60
Domestic Patent References:
| JP2000164621A | 2000-06-16 | |||
| JP2011044496A | 2011-03-03 | |||
| JP2000164621A | 2000-06-16 |
Foreign References:
| US20100052159A1 | 2010-03-04 | |||
| US20100052159A1 | 2010-03-04 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Takashi Mikami
Yasunori Ishizaka
Yoshiki Kuroki
Takashi Mikami
Yasunori Ishizaka
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